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MICRF112YMM
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MICRF112YMM数据手册
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Micrel, Inc.
MICRF112
uary 2013 4
M9999-020713
Parameter Condition Min. Typ. Max. Units
Digital/Control Section
Output Blanking STDBY transition from low to high 500 µs
Digital Input (EN, ASK, and
FSK)
High (V
IH
) 0.8 × V
DD
V
Low (V
IL
) 0.2 × V
DD
V
Digital Input Leakage Current
(EN, ASK, and FSK Pins)
High (V
IH
) 0.05 µA
Low (V
IL
) 0.05 µA
Undervoltage Lock Out
(UVLO)
1.6 V
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. The device is not guaranteed to function outside its operating ratings.
3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5k in series with 100pF.
4. Measured using the circuit shown in the “Test Circuit” section.
5. RBW = 100kHz, OBW measured at 20dBc.
6. Dependent on crystal.

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