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MMBD2836 数据手册 - Zowie Technology（智威）
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MMBD2836数据手册
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Zowie Technology Corporation
Monolithic Dual Switching Diode
MMBD2836
1
2
3
SOT-23
Rating
Symbol
Value
Unit
Characteristic
Symbol Min.
Max.
Unit
Continuous Reverse Voltage VR 75 Vdc
Peak Forward Current IF 100 mAdc
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
TA=25
o
C
Derate above 25
o
C
PD
225
1.8
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
TA=25
o
C
Derate above 25
o
C
PD
VF
300
2.4
-
-
-
1000
1000
1200
( IF=10 mAdc )
( IF=50 mAdc )
( IF=100 mAdc )
mW
mW /
o
C
Thermal Resistance, Junction to Ambient 556
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted) (EACH DIODE)
V(BR) 75 - Vdc
mVdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance, Junction to Ambient 417
o
C / WR
JA
Junction and Storage Temperature
Forward Voltage
IR
-
-
0.1
uAdc
Reverse Voltage Leakage Current
(VR=50 Vdc )
Reverse Breakdown Voltage
( IBR=100 uAdc )
CJ - 4.0 pF
Diode Capacitance
( VR=0, f=1.0MHZ )
trr - 4.0 nS
MMBD2836=A2X
-55 to +150
o
CTJ,TSTG
Reverse Recovery Time
( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 )
(1) FR-5=1.0
x
0.75
x
0.062in.
(2) Alumina=0.4
x
0.3
x
0.024in. 99.5% alumina.
Zowie Technology CorporationREV. : 0
CATHODE
CATHODE
ANODE
3
1
2
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