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MMBFJ176 数据手册 - Fairchild(飞兆/仙童)
制造商:
Fairchild(飞兆/仙童)
分类:
JFET晶体管
封装:
SOT-23-3
描述:
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
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MMBFJ176数据手册
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J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 5
Typical Performance Characteristics (Continued)
Figure 9. Transconductance vs. Drain Current
Figure 10. Capacitance vs. Voltage
Figure 11. Noise Voltage vs. Frequency
Figure 12. Channel Resistance vs. Temperature
Figure 13. Power Dissipation vs.
Ambient Temperature
0.1 1 10 100
0.1
0.5
1
5
10
I - DRAIN CURRENT (mA)
g - TRANSCONDUCTANCE (mmhos)
D
fs
V = 2.5V
GS(off)
V = -15V
f = 1.0 kHz
DG
V = 6.0V
GS(off)
- 55°C
25°C
125°C
25°C
_
_
_
_
048121620
1
5
10
100
V - GATE-SOURCE VOLTAGE (V)
C (C ) - CAPACITANCE (pF)
rs
GS
is
C (V = -15V)
is
DS
C (V = -15V)
rs
DS
f = 0.1 - 1.0 MHz
0.01 0.1 1 10 100
1
5
10
50
100
f - FREQUENCY (kHz)
e - NOISE VOLTAGE (nV / Hz)
n
V = - 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f
≥
1.0 kHz
DG
I = 5.0 mA
D
I = - 0.2 mA
D
√
-50 0 50 100 150
10
50
100
500
1000
T - AMBIENT TEMPERATURE ( C)
r - DRAIN "ON" RESISTANCE
DS
A
o
(
Ω
)
V = 2.5V
GS(off)
V = 4.5V
GS(off)
V = 8.0V
GS(off)
V = -100 mV
V = 0
DS
GS
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
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