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MMBT2222AM3T5G
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MMBT2222AM3T5G数据手册
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© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 1
1 Publication Order Number:
MMBT2222AM3/D
MMBT2222AM3T5G
NPN General Purpose
Transistor
The MMBT2222AM3T5G device is a spinoff of our popular
SOT23 threeleaded device. It is designed for general purpose
amplifier applications and is housed in the SOT723 surface mount
package. This device is ideal for lowpower surface mount
applications where board space is at a premium.
Features
Reduces Board Space
This is a HalideFree Device
This is a PbFree Device
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
40 Vdc
CollectorBase Voltage V
CBO
75 Vdc
EmitterBase Voltage V
EBO
6.0 Vdc
Collector Current Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
R
q
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
MMBT2222AM3T5G SOT723
(PbFree)
8000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT723
CASE 631AA
STYLE 1
1
2
3
AA M
AA = Specific Device Code
M = Date Code
MARKING
DIAGRAM

MMBT2222AM3T5G 数据手册

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MMBT2222AM3T5 数据手册

ON Semiconductor(安森美)
ON SEMICONDUCTOR  MMBT2222AM3T5G  单晶体管 双极, NPN, 40 V, 300 MHz, 265 mW, 600 mA, 35 hFE
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