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MMBT2907ALT1
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MMBT2907ALT1数据手册
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2011-09-30
1
SMBT2907A/MMBT2907A
1
2
3
PNP Silicon Switching Transistor
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A / MMBT2222A (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT2907A/MMBT2907A s2F
1 = B 2 = E 3 = C
SOT23
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
60 V
Collector-base voltage V
CBO
60
Emitter-base voltage V
EBO
5
Collector current I
C
600 mA
Base current I
B
100
Peak base current I
BM
200
Total power dissipation
T
S
77 °C
P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
220
K/W
1
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)

MMBT2907ALT1 数据手册

ON Semiconductor(安森美)
6 页 / 0.08 MByte
ON Semiconductor(安森美)
6 页 / 0.09 MByte

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