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MMBT4403_D87Z 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
双极性晶体管
封装:
SOT-23-3
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MMBT4403_D87Z数据手册
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2N4403 / MMBT4403 — PNP General-Purpose Amplifier
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N4403 / MMBT4403 Rev. 1.1.1 3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol
Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
(5)
I
C
= -1.0 mA, I
B
= 0 -40 V
V
(BR)CBO
Collector-Base Breakdown
Voltage
I
C
= -0.1 mA, I
E
= 0 -40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= -0.1 mA, I
C
= 0 -5.0 V
I
BL
Base Cut-Off Current V
CE
= -35 V, V
EB
= -0.4 V -0.1 μA
I
CEX
Collector Cut-Off Current V
CE
= -35 V, V
EB
= -0.4 V -0.1 μA
On Characteristics
h
FE
DC Current Gain
I
C
= -0.1 mA, V
CE
= -1.0 V 30
I
C
= -1.0 mA, V
CE
= -1.0 V 60
I
C
= -10 mA, V
CE
= -1.0 V 100
I
C
= -150 mA, V
CE
= -2.0 V
(5)
100 300
I
C
= -500 mA, V
CE
= -2.0 V
(5)
20
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(5)
I
C
= -150 mA, I
B
= -15 mA -0.40
V
I
C
= -500 mA, I
B
= -50 mA -0.75
V
BE
(sat) Base-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA
(5)
-0.75 -0.95
V
I
C
= -500 mA, I
B
= -50 mA -1.30
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product
I
C
= -20 mA, V
CE
= -10 V,
f = 100 MHz
200 MHz
C
cb
Collector-Base Capacitance
V
CB
= -10 V, I
E
= 0,
f = 140 kHz
8.5 pF
C
eb
Emitter-Base Capacitance
V
BE
= -0.5 V, I
C
= 0,
f = 140 kHz
30 pF
h
ie
Input Impedance
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
1.5 15.0 kΩ
h
re
Voltage Feedback Ratio
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
0.1 8.0 x10
-4
h
fe
Small-Signal Current Gain
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
60 500
h
oe
Output Admittance
I
C
= -1.0 mA, V
CE
= -10 V,
f = 1.0 kHz
1100μmhos
Switching Characteristics
t
d
Delay Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= -15 mA
15 ns
t
r
Rise Time 20 ns
t
s
Storage Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= I
B2
= -15 mA
225 ns
t
f
Fall Time 30 ns
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