Datasheet 搜索 > Diodes（美台） > MMBTA06 数据手册 > MMBTA06 数据手册 1/9 页
￥ 0
MMBTA06 数据手册 - Diodes（美台）
制造商:
Diodes（美台）
封装:
SOT-23
描述:
小信号晶体管（ NPN ） Small Signal Transistors (NPN)
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
MMBTA06数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0
September 2014
MPSA06 / MMBTA06 / PZTA06
NPN General-Purpose Amplifier
Features
• This device is designed for general-purpose amplifier
applications at collector currents to 300 mA.
• Sourced from process 12.
Ordering Information
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MPSA06 MPSA06 TO-92 3L Bulk
MMBTA06 1G SOT-23 3L Tape and Reel
PZTA06 A06 SOT-223 4L Tape and Reel
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 80 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 500 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
SOT-23
B
E
C
Mark: 1G
TO-92
B
C
E
SOT-223
C
MPSA06 MMBTA06 PZTA06
E B C
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
