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MMBTA42LT1 数据手册 - Motorola（摩托罗拉）
制造商:
Motorola（摩托罗拉）
封装:
SOT-23-3
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MMBTA42LT1数据手册
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LESHAN RADIO COMPANY, LTD.
M28–1/3
1
3
2
MMBTA42LT1
MMBTA43LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol
MMBTA42 MMBTA43
Unit
Collector–Emitter Voltage V
CEO
300 200 Vdc
Collector–Base Voltage V
CBO
300 200 Vdc
Emitter–Base Voltage V
EBO
6.0 6.0 Vdc
Collector Current — Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V
(BR)CEO
Vdc
(I
C
= 1.0 mAdc, I
B
= 0) MMBTA42 300 —
MMBTA43 200 —
Emitter–Base Breakdown Voltage V
(BR)CBO
Vdc
(I
C
= 100 µAdc, I
E
= 0) MMBTA42 300 —
MMBTA43 200 —
Emitter–Base Breakdown Voltage
V
(BR)EBO
6.0 — Vdc
(I
E
= 100 µAdc, I
C
= 0)
Collector Cutoff Current I
CBO
µAdc
( V
CB
= 200Vdc, I
E
= 0) MMBTA42 — 0.1
( V
CB
= 160Vdc, I
E
= 0) MMBTA43 — 0.1
Emitter Cutoff Current I
EBO
µAdc
( V
EB
= 6.0Vdc, I
C
= 0) MMBTA42 — 0.1
( V
EB
= 4.0Vdc, I
C
= 0) MMBTA43 — 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
Value
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