Datasheet 搜索 > 双极性晶体管 > Fairchild（飞兆/仙童） > MPSA06 数据手册 > MPSA06 数据手册 1/4 页
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MPSA06 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
双极性晶体管
封装:
TO-92-3
描述:
FAIRCHILD SEMICONDUCTOR MPSA06.. 单晶体管 双极, 达林顿, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装信息在P1
技术参数、封装参数在P1
电气规格在P1P2
导航目录
MPSA06数据手册
Page:
of 4 Go
若手册格式错乱，请下载阅览PDF原文件
SSTA06 / MMSTA06
Transistors
Rev.B 1/3
NPN General Purpose Transistor
SSTA06 / MMSTA06
zFeatures
1) BV
CEO < 80V ( IC=1mA)
2) Complements the SSTA56 / MMSTA56.
zPackage, marking and packaging specifications
Part No. SSTA06
SST3
R1G
T116
3000
MMSTA06
SMT3
R1G
T146
3000
Packaging type
Mark
Code
Basic ordering unit (pieces)
zDimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
∗ Mounted on 7
x
5
x
0.6mm ceramic substrate.
Symbol
V
CBO
VCEO
VEBO
IC
Tj
Tstg
Limits
80
80
4
0.5
0.35
150
−55 to +150
Unit
V
V
V
A
W
W
∗
Collector power dissipation P
C
0.2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
I
CBO
I
CEO
80
80
−
−
−
−
−
−
−
−
0.1
1
V
V
µA
I
C
=100µA
I
C
=1mA
V
CB
=80V
V
CE
=60V
V
BE(ON)
−−1.2 V
V
CE(sat)
−−0.25 V I
C
/I
B
=100mA/10mA
h
FE
100 −
−
−
−
100 −
f
T
100 −−MHz V
CE
=2V, IE= −10mA, f=100MHz
V
CE
/I
B
=1V/100mA
V
CE
=1V, IC=10mA
V
CE
=1V, IC=100mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BV
EBO
4 −−VI
E
=100µAEmitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
SSTA06
MMSTA06
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
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