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MPSA13 数据手册 - NTE Electronics
制造商:
NTE Electronics
分类:
双极性晶体管
封装:
TO-92
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MPSA13数据手册
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of 2 Go
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NTE46
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
Preamp, Driver
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CES
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25°C), P
D
625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25°C), P
D
1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
Θ
JC
83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, R
Θ
JA
200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown
Voltage
V
(BR)CES
I
C
= 100µA, V
BE
= 0 100 – – V
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 100µA, I
E
= 0 100 – – V
Emitter–Base Breakdown Voltage V
(BR)EBO
I
E
= 10µA, I
C
= 0 12 – – V
Collector Cutoff Voltage I
CBO
V
CB
= 80V, I
E
= 0 – – 100 nA
I
CES
V
CE
= 80V, V
BE
= 0 – – 500 nA
Emitter Cutoff Current I
EBO
V
BE
= 10V, I
C
= 0 – – 100 nA
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