MR2A16AVYS35 数据手册 - Everspin Technologies

MR2A16A

MR2A16A Rev. 11.2, 6/20151Copyright © Everspin Technologies 2015

256K x 16 MRAM Memory

• Fast35nsRead/Writecycle

• SRAMcompatibletiming,usesexistingSRAMcontrol-

lerswithoutredesign

• UnlimitedRead&Writeendurance

• Datanon-volatilefor>20yearsattemperature

• OnememoryreplacesFlash,SRAM,EEPROMand

• AEC-Q100Grade1option

• AllproductsmeetMSL-3moisturesensitivitylevel

• RoHS-compliantSRAMTSOP2andBGAPackages

TheMR2A16Aisa4,194,304-bitmagnetoresistiverandomaccessmemory(MRAM)deviceorga-

nizedas262,144wordsof16bits.TheMR2A16AoersSRAMcompatible35nsread/writetiming

withunlimitedendurance.Dataisalwaysnon-volatileforgreaterthan20years.Dataisautomati-

callyprotectedonpowerlossbylow-voltageinhibitcircuitrytopreventwriteswithvoltageoutof

specication.

TheMR2A16Aistheidealmemorysolutionforapplicationsthatmustpermanentlystoreandre-

trievecriticaldataandprogramsquickly.

FEATURES

INTRODUCTION