Datasheet 搜索 > 稳压芯片 > ON Semiconductor（安森美） > NCP1117LPST33T3G 数据手册 > NCP1117LPST33T3G 数据手册 13/14 页
￥ 1.093
NCP1117LPST33T3G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
稳压芯片
封装:
TO-261-4
描述:
ON SEMICONDUCTOR NCP1117LPST33T3G 稳压器, 固定LDO, 18V输入, 1.3V压差, 3.3V/1A输出, SOT-223-3 新
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P1
原理图在P2
封装尺寸在P13P14
焊盘布局在P13P14
型号编码规则在P1P12P14
标记信息在P1P14
封装信息在P12
功能描述在P2
技术参数、封装参数在P3P12
应用领域在P1P10
电气规格在P3
型号编号列表在P2
导航目录
NCP1117LPST33T3G数据手册
Page:
of 14 Go
若手册格式错乱，请下载阅览PDF原文件
NCP1117LP
www.onsemi.com
13
PACKAGE DIMENSIONS
SOT−223
ST SUFFIX
CASE 318H
ISSUE O
ÉÉÉ
ÉÉÉ
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION E1 DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.23 PER
SIDE.
4. DIMENSIONS b AND b2 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS
OF THE b AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSIONS D AND E1 ARE TO BE DETERMINED
AT DATUM PLANE H.
DIM MIN MAX
MILLIMETERS
A --- 1.80
A1 0.02 0.11
b 0.60 0.88
b1 0.60 0.80
b2 2.90 3.10
b3 2.90 3.05
c 0.24 0.35
c1 0.24 0.30
D 6.30 6.70
E 6.70 7.30
E1 3.30 3.70
e
2.30
e1
4.60
L 0.25
---
T 0 10
T
__
c1
E
H
M
0.2 C
C
A
S
B
B
B
A
A
M
0.1 C
S
A
S
B
E1
B
D
4
3
2
1
e
e1
M
0.1 C
S
A
S
B
b2
b
A
0.08
A1
c
b1
(b)
(b2)
b3
SECTION B−B L
ÇÇÇ
ÇÇÇ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
SECTION A−A
1.5
0.059
ǒ
mm
inches
Ǔ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
