Datasheet 搜索 > MOS管 > ON Semiconductor（安森美） > NTD2955PT4G 数据手册 > NTD2955PT4G 数据手册 3/8 页
￥ 1.02
NTD2955PT4G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
TO-252-3
描述:
-12A,-60V,P沟道MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
NTD2955PT4G数据手册
Page:
of 8 Go
若手册格式错乱，请下载阅览PDF原文件
NTD2955, NTD2955P, NVD2955
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
012345
0
15
25
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
24 6 810
0
10
18
24
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
V
DS
≥ −10 V
T
J
= -55°C
25°C
125°C
V
GS
= -10 V
-9 V
-8 V
-6 V
-5 V
-7 V
5
10
20
3579
4
12
22
678910
16
6
03 6 15 24
0
0.10
0.20
0.30
0 6 21 24
0.050
0.075
0.200
0.250
−I
D
, DRAIN CURRENT (AMPS) -I
D
, DRAIN CURRENT (AMPS)
T
J
= 25°C
V
GS
= −10 V
T
J
= 125°C
25°C
-55°C
12 21 3 12 15
0.05
0.15
0.25
0.100
0.225
0.125
V
GS
= −10 V
-15 V
189
0.35
0.40
0.175
918
0.150
-50
0.6
0.8
1.2
1.6
520 5060
1
100
1000
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
-25 0 25 50 75 100 125 150
V
GS
= 0 V
V
GS
= −10 V
I
D
= −6 A
15 30 40
1.0
1.4
T
J
= 125°C
175
0.4
0.2
0
1.8
2.0
100°C
-6.5 V
-5.5 V
-9.5 V
8
2
20
14
0.45
0.50
10
10 25 5535 45
−I
D,
DRAIN CURRENT (A)
−I
D,
DRAIN CURRENT (A)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (Ω)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (Ω)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
−I
DSS
, LEAKAGE (nA)
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
