Datasheet 搜索 > ON Semiconductor（安森美） > NTS2101P 数据手册 > NTS2101P 数据手册 1/5 页
￥ 0
NTS2101P 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
封装:
SOT-323-3
描述:
功率MOSFET -8.0 V， -1.4 A，单P沟道， SC- 70 Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
NTS2101P数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1 Publication Order Number:
NTS2101P/D
NTS2101P
Power MOSFET
−8.0 V, −1.4 A, Single P−Channel, SC−70
Features
• Leading Trench Technology for Low R
DS(on)
Extending Battery Life
• −1.8 V Rated for Low Voltage Gate Drive
• SC−70 Surface Mount for Small Footprint (2 x 2 mm)
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain−to−Source Voltage V
DSS
−8.0 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Stead
y
State
T
A
= 25°C
I
D
−1.4
A
T
A
= 70°C −1.1
t ≤ 5 s T
A
= 25°C −1.5 A
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.29 W
t ≤ 5 s 0.33 W
Pulsed Drain Current
tp = 10 ms
I
DM
−3.0 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode), Continuous I
S
−0.46 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
430
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
R
q
JA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
S
G
D
Device Package Shipping
†
ORDERING INFORMATION
NTS2101PT1 SOT−323 3000/Tape & Reel
P−Channel MOSFET
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ I
D
Max
−8.0 V
65 mW @ −4.5 V
78 mW @ −2.5 V
117 mW @ −1.8 V
−1.4 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS2101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
TS M G
G
1
2
3
Gate Source
Drain
TS = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Downloaded from Elcodis.com electronic components distributor
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
