NZQA6V8AXV5T1G 数据手册 - ON Semiconductor（安森美）

●极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 4.3V 反向击穿电压VBRBreakdown Voltage| 6.8V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 20W 峰值脉冲电流IPPmPeak Forward Surge Current| 1.6A 额定耗散功率PdPower dissipation| 0.38W/380mW Description & Applications| Features • Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage • Small SOT−553 SMT Package • Stand Off Voltage: 3 V • Low Leakage Current • Four Separate Unidirectional Configurations for Protection • ESD Protection: IEC61000−4−2: Level 4 ESD Protection MILSTD 883C − Method 3015−6: Class 3 • Complies to USB 1.1 Low Speed & Full Speed Specifications • These are Pb−Free Devices 描述与应用| 特性 •瞬态电压抑制器 低钳位ESD保护二极管电压 •采用小型SOT-553表面封装 •关断电压：3 V •低漏电流 •四个单独的单向配置保护 •ESD保护：IEC61000-4-24级ESD保护 MIL-STD883C - 方法3015-6：3级 •符合USB1.1低速和全速规格 •这些都是无铅设备