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OPA3693IDBQR
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OPA3693IDBQR数据手册
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ELECTRICAL CHARACTERISTICS: V
S
= +5V
OPA3693
www.ti.com
............................................................................................................................................ SBOS353A DECEMBER 2006 REVISED AUGUST 2008
Boldface limits are tested at +25 ° C.
At G = +2 ( IN grounded) and R
L
= 100 to V
S
/2, unless otherwise noted.
OPA3693IDBQ
TYP MIN/MAX OVER TEMPERATURE
TEST
0 ° C to 40 ° C to MIN/ LEVEL
PARAMETER CONDITIONS +25 ° C +25 ° C
(2)
+70 ° C
(3)
+85 ° C
(3)
UNITS MAX
(1)
AC PERFORMANCE (see Figure 29)
Small-Signal Bandwidth (V
O
= 0.5V
PP
) G = +1 600 MHz typ C
G = +2 500 400 390 380 MHz min B
G = 1 450 C
Bandwidth for 0.2dB Gain Flatness V
O
< 0.5V
PP
280 110 100 96 MHz min B
Peaking at a Gain of +1 V
O
< 0.5V
PP
2.2 2.9 3.9 4.2 dB max B
Large-Signal Bandwidth V
O
= 2V
PP
425 MHz typ C
Slew Rate 2V Step 1500 1200 1100 1000 V/ µ s min B
Rise-and-Fall Time V
O
= 0.5V Step 0.8 ns typ C
V
O
= 2V Step 1.0 ns typ C
Settling Time to 0.02% V
O
= 2V Step 16 ns typ C
Settling Time to 0.1% V
O
= 2V Step 12 ns typ C
Harmonic Distortion f = 10MHz, V
O
= 2V
PP
2nd-Harmonic R
L
= 100 to V
S
/2 72 62 62 61 dBc max B
R
L
500 to V
S
/2 73 67 66 66 dBc max B
3rd-Harmonic R
L
= 100 to V
S
/2 67 62 61 60 dBc max B
R
L
500 to V
S
/2 67 62 61 60 dBc max B
Input Voltage Noise f > 1MHz 1.8 2 2.7 2.9 nV/ Hz max B
Noninverting Input Current Noise f > 1MHz 18 19 21 22 pA/ Hz max B
Inverting Input Current Noise (internal) f > 1MHz 22 24 26 27 pA/ Hz max B
DC PERFORMANCE
(4)
Gain Error G = +1 ± 0.8 % typ C
G = +2 ± 0.6 ± 1.2 ± 1.3 ± 1.4 % max A
G = 1, R
s
= 0 ± 0.5 ± 1.1 ± 1.2 ± 1.3 % max B
Internal R
F
and R
G
Maximum 300 341 345 347 max A
Minimum 300 264 260 258 min A
Input Offset Voltage V
CM
= V
S
/2 ± 0.6 ± 3.5 ± 4.0 ± 4.2 mV max A
Average Offset Voltage Drift V
CM
= V
S
/2 ± 12 ± 12 µ V/ ° C max B
Noninverting Input Bias Current V
CM
= V
S
/2 ± 5 ± 25 ± 33 ± 35 µ A max A
Average Noninverting Input Bias Current Drift V
CM
= V
S
/2 ± 170 ± 170 nA/ ° C max B
Inverting Input Bias Current (internal) V
CM
= V
S
/2 ± 20 ± 50 ± 52 ± 54 µ A max A
Average Inverting Input Bias Current Drift V
CM
= V
S
/2 ± 50 ± 60 nA/ ° C max B
(1) Test levels: (A) 100% tested at +25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25 ° C specifications.
(3) Junction temperature = ambient at low temperature limits; junction temperature = ambient +14 ° C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of pin.
Copyright © 2006 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
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