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PDTC144ET,215 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
双极性晶体管
封装:
SOT-23-3
描述:
NXP PDTC144ET,215 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SOT-23
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PDTC144ET,215数据手册
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PDTC144E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 15 November 2011 3 of 17
NXP Semiconductors
PDTC144E series
NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage
positive - +40 V
negative - 10 V
I
O
output current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
-100mA
P
tot
total power dissipation T
amb
25 C
PDTC144EE (SOT416)
[1][2]
-150mW
PDTC144EM (SOT883)
[2][3]
-250mW
PDTC144ET (SOT23)
[1]
-250mW
PDTC144EU (SOT323)
[1]
-200mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
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