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PDTC144WU 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
双极性晶体管
封装:
SOT-323
描述:
NPN 晶体管，NXP### 数字晶体管，NXP配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
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PDTC144WU数据手册
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2004 Aug 17 4
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
PDTC144W series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PDTC144WE − plastic surface mounted package; 3 leads SOT416
PDTC144WEF − plastic surface mounted package; 3 leads SOT490
PDTC144WK − plastic surface mounted package; 3 leads SOT346
PDTC144WM − leadless ultra small plastic package; 3 solder lands; body
1.0
× 0.6 × 0.5 mm
SOT883
PDTC144WS − plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTC144WT − plastic surface mounted package; 3 leads SOT23
PDTC144WU − plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 10 V
V
i
input voltage
positive − +40 V
negative − −10 V
I
O
output current (DC) − 100 mA
I
CM
peak collector current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT54 note 1 − 500 mW
SOT23 note 1 − 250 mW
SOT346 note 1 − 250 mW
SOT323 note 1 − 200 mW
SOT490 notes 1 and 2 − 250 mW
SOT883 notes 2 and 3 − 250 mW
SOT416 note 1 − 150 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
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