PESD3V3S1UB 数据手册 - NXP（恩智浦）

●极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 3.3V 反向击穿电压VBRBreakdown Voltage| 5.2V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 330W 峰值脉冲电流IPPmPeak Forward Surge Current| 18A 额定耗散功率PdPower dissipation| Description & Applications| FEATURES •ESD protection diodes in SOD523 package •Unidirectional ESD protection of one line •Max. peak pulse power: PPP = 330 W at tp = 8/20 µs •Low clamping voltage: Vcl = 20 V at IPP = 18 A •Ultra low leakage current: IRM < 700 nA •ESD protection > 23 kV •IEC 61000-4-2, level 4 (ESD) •IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs 描述与应用| 特性 •SOD523封装ESD保护二极管 •一条线单向ESD保护 •最大峰值脉冲功率：PPP=330 W@tp= 8/20μs •低钳位电压：Vcl=20 V IPP=18Å •超低漏电流：IRM<700 nA •ESD保护>23千伏 •IEC61000-4-2第4级（ESD） •IEC61000-4-5（浪涌）; IPP=18 A@tp= 8/20μs