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PMLL4148L,135
器件3D模型
0.087
导航目录
  • 引脚图在P3
  • 封装尺寸在P7
  • 型号编码规则在P3
  • 标记信息在P3
  • 封装信息在P7
  • 焊接温度在P8
  • 功能描述在P2
  • 技术参数、封装参数在P10
  • 应用领域在P2P10
PMLL4148L,135数据手册
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PMLL4148L_PMLL4448 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 1 February 2011 3 of 11
NXP Semiconductors
PMLL4148L; PMLL4448
High-speed switching diodes
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] T
j
=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
=60mA; R
L
= 100 Ω; measured at I
R
=1mA.
[2] When switched from I
F
=50mA; t
r
=20ns.
P
tot
total power dissipation T
amb
=25°C
[1]
- 500 mW
T
j
junction temperature - 200 °C
T
amb
ambient temperature 65 +200 °C
T
stg
storage temperature 65 +200 °C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 350 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 300 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
PMLL4148L I
F
=50mA --1V
PMLL4448 I
F
=5mA 620- 720mV
I
F
=100mA --1V
I
R
reverse current V
R
=20V --25nA
V
R
=20V; T
j
=150°C --50μA
I
R
reverse current
PMLL4448 V
R
=20V; T
j
=100°C --3μA
C
d
diode capacitance V
R
=0V; f=1MHz --4pF
t
rr
reverse recovery time
[1]
--4ns
V
FR
forward recovery voltage
[2]
--2.5V

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