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PMV45EN 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
MOS管
封装:
SOT-23
描述:
NXP PMV45EN 晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V
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PMV45EN数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
02/29/12
IRLML0030TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML0030TRPbF
D
S
G
3
1
2
• Load/ System Switch
Features and Benefits
Features
Benefits
V
DS
30 V
V
GS Max
± 20 V
R
DS(on) max
(@V
GS
= 10V)
27
m
Ω
R
DS(on) max
(@V
GS
= 4.5V)
40
m
Ω
Low R
DS(on)
(
≤
27m
Ω
)
Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
⇒
Environmentally friendly
MSL1, Industrial qualification Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
e
––– 100
R
θJA
Junction-to-Ambient (t<10s)
f
––– 99
Max.
5.3
4.3
-55 to + 150
± 20
0.01
30
1.3
0.8
21
W
°C/W
A
PD - 96278B
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