PRTR5V0U4D 数据手册 - NXP（恩智浦）

●极性Polarization| 双向 Bidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 反向击穿电压VBRBreakdown Voltage| 6V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 峰值脉冲电流IPPmPeak Forward Surge Current| 额定耗散功率PdPower dissipation| Description & Applications| FEATURES •Ultra low capacitance quadruple rail-to-rail ESD protection •ESD protection of four high-speed data lines or high-frequency signal lines •Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF •ESD protection up to 8 kV IEC 61000-4-2, level 4 (ESD) •Very low clamping voltage due to an integrated additional ESD protection diode •Very low reverse current •AEC-Q101 qualified •Small SMD plastic package 描述与应用| 特性 •超低电容翻两番轨至轨ESD保护 •四个高速数据线或高频信号线ESD保护 •超低输入/输出对地电容：C（I / O-GND）=1 pF的 •高达8 kVESD保护 IEC61000-4-2第4级（ESD） •极低的钳位电压，由于集成额外的ESD保护二极管 •非常低的反向电流 •AEC-Q101合格 •小SMD塑料包装