PUMH11 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA Q1基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm Q1电阻比(R1/R2) Q1 Resistance Ratio| 1 Q2基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm Q2电阻比(R1/R2) Q2 Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 30 截止频率fT Transtion Frequency(fT)| 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • NPN resistor-equipped transistors; • Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 10 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. 描述与应用| 特点 •NPN电阻配备晶体管; •晶体管不同极性和内置的偏置电阻R1和R2（典型值10KΩ/Ohm的） •晶体管之间没有相互干扰 •简化电路设计 •减少元件数量和电路板空间 应用 •特别适用于空间减少接口和驱动电路 •逆变器电路配置，而无需使用外部电阻器