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REF195FS 数据手册 - ADI(亚德诺)
制造商:
ADI(亚德诺)
分类:
电压基准芯片
封装:
SOIC-8
描述:
精密微功耗,低压差电压基准 Precision Micropower, Low Dropout Voltage References
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技术参数、封装参数在P1P4P16
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REF195FS数据手册
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REF19x Series
Rev. K | Page 6 of 28
ELECTRICAL CHARACTERISTICS—REF191 @ −40°C ≤ T
A
≤ +125°C
@ V
S
= 3.3 V, −40°C ≤ T
A
≤ +125°C, unless otherwise noted.
Table 4.
Parameter Symbol Condition Min Typ Max Unit
TEMPERATURE COEFFICIENT
1, 2
TCV
O
/°C
E Grade I
OUT
= 0 mA 2 ppm/°C
F Grade 5 ppm/°C
G Grade
3
10 ppm/°C
LINE REGULATION
4
ΔV
O
/ΔV
IN
E Grade 3.0 V ≤ V
S
≤ 15 V, I
OUT
= 0 mA 10 ppm/V
F and G Grades 20 ppm/V
LOAD REGULATION
4
ΔV
O
/ΔV
LOAD
E Grade V
S
= 5.0 V, 0 mA ≤ I
OUT
≤ 20 mA 10 ppm/mA
F and G Grades 20 ppm/mA
DROPOUT VOLTAGE V
S
− V
O
V
S
= 3.3 V, I
LOAD
= 10 mA 1.25 V
V
S
= 3.6 V, I
LOAD
= 20 mA 1.55 V
1
For proper operation, a 1 μF capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/°C.
TCV
O
= (V
MAX
− V
MIN
)/V
O
(T
MAX
− T
MIN
)
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
ELECTRICAL CHARACTERISTICS—REF192 @ T
A
= 25°C
@ V
S
= 3.3 V, T
A
= 25°C, unless otherwise noted.
Table 5.
Parameter Symbol Condition Min Typ Max Unit
INITIAL ACCURACY
1
V
O
E Grade I
OUT
= 0 mA 2.498 2.500 2.502 V
F Grade 2.495 2.505 V
G Grade 2.490 2.510 V
LINE REGULATION
2
ΔV
O
/ΔV
IN
E Grade 3.0 V ≤ V
S
≤ 15 V, I
OUT
= 0 mA 2 4 ppm/V
F and G Grades 4 8 ppm/V
LOAD REGULATION
2
ΔV
O
/ΔV
LOAD
E Grade V
S
= 5.0 V, 0 mA ≤ I
OUT
≤ 30 mA 4 10 ppm/mA
F and G Grades 6 15 ppm/mA
DROPOUT VOLTAGE V
S
− V
O
V
S
= 3.5 V, I
LOAD
= 10 mA 1.00 V
V
S
= 3.9 V, I
LOAD
= 30 mA 1.40 V
LONG-TERM STABILITY
3
DV
O
1000 hours @ 125°C 1.2 mV
NOISE VOLTAGE e
N
0.1 Hz to 10 Hz 25 μV p-p
1
Initial accuracy does not include shift due to solder heat effect (see the Applications Information section).
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
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