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REF3320AIDCKR
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REF3320AIDCKR数据手册
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5
REF3312
,
REF3318
,
REF3320
,
REF3325
,
REF3330
,
REF3333
www.ti.com
SBOS392G AUGUST 2007REVISED DECEMBER 2016
Product Folder Links: REF3312 REF3318 REF3320 REF3325 REF3330 REF3333
Submit Documentation FeedbackCopyright © 2007–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) See the Power-Supply Recommendations section of this data sheet.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted).
(1)
MIN MAX UNIT
Voltage
Input voltage 7.5
V
Output voltage 5
Current Output short-circuit, I
SC
(2)
180 mA
Temperature
Operating –50 150
°CJunction, T
J
150
Storage, T
stg
–65 150
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±4000
VCharged device model (CDM), per JEDEC specification JESD22-C101
(2)
±1000
Machine model (MM) ±200
(1) The minimum supply voltage for the REF3312 is 1.7 V.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted).
MIN NOM MAX UNIT
V
IN
Supply input voltage
(1)
V
OUT
+ 0.2 5.5 V
I
OUT
Output current range –30 30 mA
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC
(1)
REF33xx
REF3325,
REF3330
UNIT
DCK (SC70) DBZ (SOT-23) RSE (UQFN)
3 PINS 3 PINS 8 PINS
R
θJA
Junction-to-ambient thermal resistance 279.7 313.1 61.2 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 136.3 144.0 32.6 °C/W
R
θJB
Junction-to-board thermal resistance 56.9 109.3 16.0 °C/W
ψ
JT
Junction-to-top characterization parameter 11.0 18.2 1.3 °C/W
ψ
JB
Junction-to-board characterization parameter 56.1 107.9 16.0 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W

REF3320AIDCKR 数据手册

TI(德州仪器)
34 页 / 1.56 MByte
TI(德州仪器)
33 页 / 1.59 MByte
TI(德州仪器)
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REF3320 数据手册

TI(德州仪器)
30ppm/C 漂移、3.9uA、SOT23-3、SC70-3 电压基准
TI(德州仪器)
TEXAS INSTRUMENTS  REF3320AIDBZT  电压基准, 精密, 低功率, 系列 - 固定, REF3320系列, 2.048V, SOT-23-3
TI(德州仪器)
3.9レA, SC70-3 ,为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
TI(德州仪器)
TEXAS INSTRUMENTS  REF3320AIDCKT  电压基准, 精密, 低功率, 系列 - 固定, REF3320系列, 2.048V, SC-70-3
TI(德州仪器)
3.9レA, SC70-3 ,为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
TI(德州仪器)
3.9レA, SC70-3 ,为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
TI(德州仪器)
3.9レA, SC70-3 ,为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
TI(德州仪器)
3.9レA, SC70-3 ,为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
TI(德州仪器)
3.9レA, SC70-3 ,为30ppm / ΣC漂移参考电压 3.9レA, SC70-3, 30ppm/∑C Drift VOLTAGE REFERENCE
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