RN2102MFV 数据手册 - Toshiba（东芝）

●集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| -50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| -50V 集电极连续输出电流IC Collector Current(IC)| -100mA/-0.1A 基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm 电阻比(R1/R2) Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 50 截止频率fT Transtion Frequency(fT)| 250MHz 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • Ultra-small package, suited to very high density mounting • Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. • A wide range of resistor values is available for use in various circuits. • Complementary to the RN1101MFV to RN1106MFV Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •晶体管的硅PNP外延型（PCT工艺） •超小型封装，适合高密度安装 •结合到晶体管的偏置电阻器，降低了部件的数目， 所以使制造的更加紧凑的设备和降低 装配成本。 •宽范围的电阻值是可用于在各种电路。 •互补RN1101MFV RN1106MFV 应用 •开关，逆变电路，接口电路和驱动器电路应用