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S1G-E3/61T
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S1G-E3/61T数据手册
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S1A thru S1M
Vishay General Semiconductor
Document Number: 88711
Revision: 07-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of
power supplies, inverters, converters and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V to 1000 V
I
FSM
40 A, 30 A
E
AS
5 mJ
I
R
1.0 µA, 5.0 µA
V
F
1.1 V
T
J
max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Device marking code SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Maximum average forward rectified current (Fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
40 30 A
Non-repetitive peak reverse avalanche energy
at 25 °C, I
AS
= 1 A, L = 10 mH
E
AS
5mJ
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C

S1G-E3/61T 数据手册

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4 页 / 0.07 MByte
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