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Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 002-00886 Rev. *A Revised December 16, 2015
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash
with 90 nm MirrorBit Process Technology
General Description
The Spansion S29GL01G/512/256/128P are Mirrorbit
®
Flash products fabricated on 90 nm process technology. These devices
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that
allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than
standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density,
better performance and lower power consumption.
Distinctive Characteristics
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O™ control
All input levels (address, control, and DQ input levels) and
outputs are determined by voltage on V
IO
input. V
IO
range is 1.65
to V
CC
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming time for
multiple-word updates
Secured Silicon Sector region
128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number
Can be programmed and locked at the factory or by the
customer
Uniform 64 Kword/128 Kbyte Sector Architecture
S29GL01GP: One thousand twenty-four sectors
S29GL512P: Five hundred twelve sectors
S29GL256P: Two hundred fifty-six sectors
S29GL128P: One hundred twenty-eight sectors
100,000 erase cycles per sector typical
20-year data retention typical
Offered Packages
56-pin TSOP
64-ball Fortified BGA
Suspend and Resume commands for Program and Erase
operations
Write operation status bits indicate program and erase operation
completion
Unlock Bypass Program command to reduce programming time
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector Protection
WP#/ACC input
Accelerates programming time (when V
HH
is applied) for greater
throughput during system production
Protects first or last sector regardless of sector protection
settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cycle
completion

S29GL128P10TFI013 数据手册

Cypress Semiconductor(赛普拉斯)
82 页 / 0.98 MByte
Cypress Semiconductor(赛普拉斯)
82 页 / 0.88 MByte

S29GL128P10 数据手册

Spansion(飞索半导体)
SPANSION  S29GL128P10TFI010  闪存, 或非, 128 Mbit, 16M x 8位 / 8M x 16位, 并行, TSOP, 56 引脚
Cypress Semiconductor(赛普拉斯)
GL-P 系列 128 M (16 M x 8) 3.6 V 100 ns 表面贴装 闪存 - TSOP-56
Cypress Semiconductor(赛普拉斯)
S29GL128P 系列 128 Mb (16M x 8) 3 V 100 ns 表面贴装 闪存-NOR 存储器 - BGA-64
Cypress Semiconductor(赛普拉斯)
S29GL128P 系列 128 Mb (16M x 8) 3 V 100 ns 闪存-NOR 存储器 - BGA-64
Spansion(飞索半导体)
SPANSION  S29GL128P10FFI010  闪存, 128 Mbit, 16M x 8位 / 8M x 16位, CFI, FBGA, 64 引脚
Cypress Semiconductor(赛普拉斯)
S29GL128P 系列 128 Mb (16M x 8) 3 V 100 ns 表面贴装 闪存-NOR 存储器 - TSOP-56
Spansion(飞索半导体)
Cypress Semiconductor(赛普拉斯)
Spansion(飞索半导体)
Cypress Semiconductor(赛普拉斯)
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