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S34ML08G201BHI000 数据手册 - Spansion（飞索半导体）
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S34ML08G201BHI000数据手册
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Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 002-00484 Rev. *E Revised November 19, 2015
S34ML08G2
8 Gb, 4-bit ECC, x8 I/O and 3 V V
CC
NAND Flash Memory for Embedded
ADVANCE
Distinctive Characteristics
Density
– 8 Gb (4 Gb x 2)
Architecture (For each 4 Gb device)
– Input / Output Bus Width: 8-bits
– Page Size: (2048 + 128) bytes; 128-byte spare area
– Block Size: 64 Pages or (128k + 8k) bytes
– Plane Size
– 2048 Blocks per Plane or (256M + 16M) bytes
–Device Size
– 2 Planes per Device or 512 Mbyte
NAND Flash Interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data and Commands multiplexed
Supply Voltage
– 3.3V device: Vcc = 2.7V ~ 3.6V
Security
– One Time Programmable (OTP) area
– Serial number (unique ID)
– Hardware program/erase disabled during power transition
Additional Features
– Supports Multiplane Program and Erase commands
– Supports Copy Back Program
– Supports Multiplane Copy Back Program
– Supports Read Cache
Electronic Signature
– Manufacturer ID: 01h
Operating Temperature
– Industrial: -40°C to 85°C
– industrial Plus: -40°C to 105°C
Performance
Page Read / Program
– Random access: 30 µs (Max)
– Sequential access: 25 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
Block Erase / Multiplane Erase
– Block Erase time: 3.5 ms (Typ)
Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes)
– 10 Year Data retention (Typ)
– Blocks zero and one are valid and will be valid for at least 1000
program-erase cycles with ECC
Package Options
– Lead Free and Low Halogen
– 48-Pin TSOP 12 x 20 x 1.2 mm
– 63-Ball BGA 11 x 9 x 1 mm
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