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SBR10U200CTB-G 数据手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
TVS二极管
封装:
TO-263
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SBR10U200CTB-G数据手册
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SBR is a registered trademark of Diodes Incorporated.
SBR10U200
Document number: DS30990 Rev. 10 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
SBR10U200CT
SBR10U200CTFP
SBR10U200CTB
Maximum Ratings (Per Leg) @T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
200 V
Average Rectified Output Current (Per Leg)
(Total)
I
O
5
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2μS-1Khz)
I
RRM
3 A
Isolation Voltage (ITO-220AB Only)
From terminal to heatsink t = 3 sec.
V
AC
2000 V
Thermal Characteristics (Per Leg)
Characteristic Symbol Value Unit
Typical Thermal Resistance
Package = TO-220AB & D
2
Pak
Package = ITO-220AB
R
θ
JC
2
4
ºC/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +175 ºC
Electrical Characteristics (Per Leg) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
V
F
-
-
0.60
-
0.82
0.65
0.88
V
I
F
= 5A, T
J
= 25ºC
I
F
= 5A, T
J
= 125ºC
I
F
= 10A, T
J
= 25ºC
Leakage Current (Note 6)
I
R
- -
0.2
25
mA
V
R
= 200V, T
J
= 25ºC
V
R
= 200V, T
J
= 125ºC
Reverse Recovery Time
t
rr
-
24 30
ns
I
F
= 0.5A, I
R
= 1A, I
RR
= 0.25A
- 20 25
I
F
= 1A, V
R
= 30V,
di/dt = 100A/μs, T
J
= 25ºC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Using heatsink (by Black Aluminum 45mm * 20mm * 12mm)
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