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SI1031X-T1-E3 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
封装:
SC-89
描述:
P通道20 -V （D -S ）的MOSFET P-Channel 20-V (D-S) MOSFET
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SI1031X-T1-E3数据手册
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Vishay Siliconix
Si1031R/X
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
P-Channel 20 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• High-Side Switching
• Low On-Resistance: 8
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 45 ns
• TrenchFET
®
Power MOSFETs: 1.5 V Rated
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(mA)
- 20
8 at V
GS
= - 4.5 V
- 150
12 at V
GS
= - 2.5 V
- 125
15 at V
GS
= - 1.8 V
- 100
20 at V
GS
= - 1.5 V
- 30
SC-75A (SOT-416): Si1031R
SC-89 (SOT-490): Si1031X
Top View
2
1
S
D
G
3
Marking Code: H
SC-75A or SC-89
Ordering Information:
Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on FR4 board.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol
Si1031R Si1031X
Unit
5 s Steady State 5 s Steady State
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 6
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 150 - 140 - 165 - 155
mA
T
A
= 85 °C
- 110 - 100 - 150 - 125
Pulsed Drain Current
a
I
DM
- 500 - 600
Continuous Source Current (Diode Conduction)
a
I
S
- 250 - 200 - 340 - 240
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
280 250 340 300
mW
T
A
= 85 °C
145 130 170 150
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
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