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SM6T36A 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-214AA
描述:
STMICROELECTRONICS SM6T36A TVS二极管, TVS, Transil SM6T系列, 单向, 30.8 V, 64.3 V, DO-214AA, 2 引脚
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电气规格在P2P3P4
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SM6T36A数据手册
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若手册格式错乱，请下载阅览PDF原文件
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1
November 2014
SMBJ5V0(C)A - SMBJ170(C)A
600 Watt Transient Voltage Suppressors
Features
• Glass-Passivated Junction
• 600 W Peak Pulse Power Capability
on 10/1000 μs Waveform.
• Excellent Clamping Capability
• Low-Incremental Surge Resistance
• Fast Response Time: Typically Less than 1.0 ps from 0 V
to BV minimum for Unidirectional and 5.0 ns for Bidirectional
•Typical I
R
Less than 1.0 μA Above 10 V
• UL Certificate #E258596
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum.
Symbol Parameter Value Unit
P
PPM
Peak Pulse Power Dissipation on 10/1000 μs Waveform 600 W
I
PPM
Peak Pulse Current on 10/1000 μs Waveform See Table A
I
FSM
Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)
(1)
100 A
T
STG
Storage Temperature Range -55 to 150 °C
T
J
Operating Junction Temperature Range -55 to 150 °C
SMB/DO-214AA
Band denotes cathode on unidirectional devices only.
No band on bi-directional devices. Bi-directional types
have CA suffix where electrical characteristics apply in
both directions suitable for bi-directional applications.
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