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SM6T39A 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-214AA
描述:
Transil™ TVS SMT Unidirectional 600W, SM6T Series, STMicroelectronics### 瞬态电压抑制器，STMicroelectronics
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SM6T39A数据手册
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Characteristics SM6T
2/10 Doc ID 3082 Rev 9
1 Characteristics
Figure 1. Electrical characteristics - definitions
Figure 2. Pulse definition for electrical characteristics
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
T
j
initial = T
amb
600 W
T
stg
Storage temperature range -65 to 150
°CT
j
Operating junction temperature range -55 to 150
T
L
Maximum lead temperature for soldering during 10 s. 260
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads 20 °C/W
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout 100 °C/W
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
Unidirectional
Bidirectional
Symbol Parameter
V Stand-off voltage
V Breakdown voltage
V Clamping voltage
I Leakage current @ V
I Peak pulse current
T Voltage temperature coefficient
V Forward voltage drop
R Dynamic resistance
RM
BR
CL
RM RM
PP
F
D
α
Repetitive pulse current
t
r
= rise time (µs)
t
p
= pulse duration time (µs)
t
r
t
p
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