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SM6T6V8A-E3/52数据手册
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SM6T Series
Vishay General Semiconductor
Document Number: 88385
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB
®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
600 W peak pulse power capability with a
10/1000 µs waveform
Available in uni-directional and bi-directional
Excellent clamping capability
Low inductance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
SM6T12CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
V
BR
6.8 V to 220 V
P
PPM
600 W
P
D
5.0 W
I
FSM
(uni-directional only) 100 A
T
J
max. 150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation on 10/1000 µs waveform
(1)(2)
(Fig. 1) P
PPM
600 W
Peak power pulse current with a 10/1000 µs waveform
(1)
(Fig. 3) I
PPM
See next table A
Power dissipation on infinite heatsink T
A
= 50 °C P
D
5.0 W
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
- 65 to +150 °C

SM6T6V8A-E3/52 数据手册

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SM6T6V8 数据手册

ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T6V8A  TVS二极管, TVS, Transil SM6T系列, 单向, 5.8 V, 13.4 V, DO-214AA, 2 引脚
ST Microelectronics(意法半导体)
Transil™ TVS SMT 双向 600W,SM6T 系列,STMicroelectronics ### 瞬态电压抑制器,STMicroelectronics
VISHAY(威世)
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌### 瞬态电压抑制器,Vishay Semiconductor
ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T6V8AY  TVS二极管, AEC-Q342, Transil SM6T系列, 单向, 5.8 V, 13.4 V, DO-214AA, 2 引脚
ST Microelectronics(意法半导体)
STMICROELECTRONICS  SM6T6V8CAY  TVS二极管, AEC-Q343, Transil SM6T系列, 双向, 5.8 V, 13.4 V, DO-214AA, 2 引脚
VISHAY(威世)
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SM6T 系列,Vishay Semiconductor### 瞬态电压抑制器,Vishay Semiconductor
Vishay Semiconductor(威世)
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
Vishay Semiconductor(威世)
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SM6T 系列,Vishay Semiconductor### 瞬态电压抑制器,Vishay Semiconductor
Vishay Semiconductor(威世)
Vishay Semiconductor(威世)
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