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SMDJ64A-HRAT7 数据手册 - Littelfuse（力特）
制造商:
Littelfuse（力特）
分类:
二极管
封装:
DO-214AB
描述:
单向 64V 3000W
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SMDJ64A-HRAT7数据手册
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TVS Diodes
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/10/16
Surface Mount – 1500W > SMCJ-HRA Series
SMCJ-HRA devices are ideal for the high reliability
protection of I/O Interfaces, V
CC
bus and other vulnerable
circuits used in Telecom, Computer, Industrial and
Consumer electronic applications.
Applications
• 1500W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• High reliability devices
with fabrication and
assembly lots traceability
• Enhanced reliability
screening options are
available in reference to
MIL-PRF-19500. Refer to
screen process table for
more detail on screening
options
• For surface mounted
applications to optimize
board space
• Low profile package
• Built-in strain relief
• V
BR
@ T
J
= V
BR
@25°C
x (1+
αT x (T
J
- 25))
(
αT:Temperature
Coefficient, typical value
is 0.1%)
• Glass passivated chip
junction
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1µA
above 12V
• High Temperature
soldering guaranteed:
260°C/40 seconds at
terminals
• Plastic package is
flammability rated V-0 per
UL 94
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is Pb-
free and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Features
The SMCJ-HRA High Reliability series is designed
specifically to protect sensitive electronic equipment from
voltage transients induced by lightning and other transient
voltage events. These are available with a variety of up-
screening options for enhanced reliability.
Description
Parameter Symbol Value Unit
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs waveform
(Fig.1)(Note 1), (Note 2)
P
PPM
1500 W
Power Dissipation on infinite heat
sink at T
A
=50
O
C
P
M(AV)
6.5 W
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
I
FSM
200 A
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
only
V
F
3.5 V
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-65 to 150 °C
Typical Thermal Resistance Junction
to Lead
R
uJL
15 °C/W
Typical Thermal Resistance Junction
to Ambient
R
uJA
75 °C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Agency Approvals
AGENCY AGENCY FILE NUMBER
E230531
Functional Diagram
Bi-directional
Uni-directional
Cathode
Anode
SMCJ-HRA Series
Bi-directional
Uni-directional
RoHS
e3
Pb
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