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SN74LVC1G06DCKR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
逻辑芯片
封装:
SC-70-5
描述:
TEXAS INSTRUMENTS SN74LVC1G06DCKR 逻辑芯片, 单路反相缓冲器/驱动器, SC70-5
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引脚图在P4Hot
典型应用电路图在P1P10P11
原理图在P9
封装尺寸在P13P14P16P17
标记信息在P13P14
封装信息在P12P13P14P15P16P17
技术参数、封装参数在P5P10
应用领域在P1P15P30
电气规格在P6P7
型号编号列表在P10
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SN74LVC1G06DCKR数据手册
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SN74LVC1G06
www.ti.com
SCES295X –JUNE 2000–REVISED AUGUST 2015
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
V
CC
Supply voltage –0.5 6.5 V
V
I
Input voltage
(2)
–0.5 6.5 V
V
O
Voltage applied to any output in the high-impedance or power-off state
(2)
–0.5 6.5 V
V
O
Voltage applied to any output in the high or low state
(2)(3)
–0.5 6.5 V
I
IK
Input clamp current V
I
< 0 –50 mA
I
OK
Output clamp current V
O
< 0 –50 mA
I
O
Continuous output current ±50 mA
Continuous current through V
CC
or GND ±100 mA
T
j
Junction temperature –65 150 °C
T
stg
Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of V
CC
is provided in the Recommended Operating Conditions table.
7.2 ESD Ratings
VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
+2000
V
(ESD)
Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
+1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 5
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