SSM6J213FE 数据手册 - Toshiba（东芝）

●最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs(±)Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -2.6A 源漏极导通电阻RdsDrain-Source On-State Resistance| 250mΩ@ VGS = -1.5V, ID = -250mA 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.3~-1.0V 耗散功率PdPower Dissipation| 700mW/0.7W Description & Applications| TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 描述与应用| 东芝场效应晶体管的硅P沟道MOS型（U-MOSⅥ） ○电源管理开关应用 •1.5-V驱动器 •低导通电阻：RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)