Datasheet 搜索 > 存储芯片 > Silicon Storage Tech > SST25VF016B-50-4I-S2AF 数据手册 > SST25VF016B-50-4I-S2AF 数据手册 1/28 页
器件3D模型￥ 0
SST25VF016B-50-4I-S2AF 数据手册 - Silicon Storage Tech
制造商:
Silicon Storage Tech
分类:
存储芯片
封装:
SOIC
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
型号编码规则在P26
封装信息在P27
导航目录
SST25VF016B-50-4I-S2AF数据手册
Page:
of 28 Go
若手册格式错乱，请下载阅览PDF原文件
©2008 Silicon Storage Technology, Inc.
S71271-03-000 9/08
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– Up to 80 MHz
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (200 mils)
– 8-contact WSON (6mm x 5mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. The SST25VF016B devices are
enhanced with improved operating frequency and even
lower power consumption than the original SST25VFxxxA
devices. SST25VF016B SPI serial flash memories are
manufactured with SST’s proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25VF016B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF016B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF016B device is offered in both 8-lead SOIC
(200 mils) and 8-contact WSON (6mm x 5mm) packages.
See Figure 2 for pin assignments.
16 Mbit SPI Serial Flash
SST25VF016B
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
