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ST13007
2.407
导航目录
  • 封装尺寸在P7P8P9
  • 标记信息在P1
  • 封装信息在P1
  • 技术参数、封装参数在P2
  • 应用领域在P1P11
  • 电气规格在P3P4P5P6
ST13007数据手册
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December 2009 Doc ID 5263 Rev 4 1/11
11
ST13007
High voltage fast-switching NPN power transistor
Features
DC current gain classification
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
Electronic ballast for fluorescent lighting
Switch mode power supplies
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Figure 1. Internal schematic diagram
TO-220
1
2
3
TAB
Table 1. Device summary
Order code Marking
(1)
Package Packaging
ST13007
ST13007A
TO-220 Tube
ST13007B
1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics
reserves the right to ship from any group according to production availability.
www.st.com

ST13007 数据手册

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