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STD10 数据手册 - Greenray Industries
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STD10数据手册
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October 2011 Doc ID 16929 Rev 3 1/18
18
STD10NM50N
STF10NM50N, STP10NM50N
N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220
MDmesh™ II Power MOSFET
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
max
I
D
STD10NM50N
550 V < 0.63 Ω 7 ASTF10NM50N
STP10NM50N
1
2
3
TO-220FP
TO-220
DPAK
1
2
3
TAB
1
3
TAB
!-V
$4!"
'
3
Table 1. Device summary
Order codes Marking Packages Packaging
STD10NM50N
10NM50N
DPAK Tape and reel
STF10NM50N TO-220FP
Tub e
STP10NM50N TO-220
www.st.com
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