Datasheet 搜索 > MOS管 > ST Microelectronics(意法半导体) > STD11NM50N 数据手册 > STD11NM50N 数据手册 1/16 页
¥ 6.373
STD11NM50N 数据手册 - ST Microelectronics(意法半导体)
制造商:
ST Microelectronics(意法半导体)
分类:
MOS管
封装:
TO-252-3
描述:
STMICROELECTRONICS STD11NM50N 晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
STD11NM50N数据手册
Page:
of 16 Go
若手册格式错乱,请下载阅览PDF原文件
November 2010 Doc ID 17156 Rev 3 1/16
16
STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram
Order codes V
DSS
@T
Jmax
R
DS(on)
max
I
D
STD11NM50N
STF11NM50N
STP11NM50N
550 V < 0.47 Ω 8.5 A
DPAK
1
3
1
2
3
TO-220
1
2
3
TO-220FP
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STD11NM50N 11NM50N DPAK Tape and reel
STF11NM50N 11NM50N TO-220FP Tube
STP11NM50N 11NM50N TO-220 Tube
www.st.com
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件