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November 2010 Doc ID 17156 Rev 3 1/16
16
STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram
Order codes V
DSS
@T
Jmax
R
DS(on)
max
I
D
STD11NM50N
STF11NM50N
STP11NM50N
550 V < 0.47 Ω 8.5 A
DPAK
1
3
1
2
3
TO-220
1
2
3
TO-220FP
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STD11NM50N 11NM50N DPAK Tape and reel
STF11NM50N 11NM50N TO-220FP Tube
STP11NM50N 11NM50N TO-220 Tube
www.st.com

STD11NM50N 数据手册

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STD11NM50 数据手册

ST Microelectronics(意法半导体)
STMICROELECTRONICS  STD11NM50N  晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
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