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STD7N80K5 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
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N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STD7N80K5数据手册
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STD7N80K5, STF7N80K5, STP7N80K5, STU7N80K5 Electrical ratings
Doc ID 023448 Rev 4 3/23
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK, TO-220,
IPAK
TO-220FP
V
GS
Gate- source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 6 6
(1)
1. Limited by package.
A
I
D
Drain current (continuous) at T
C
= 100 °C 3.8 3.8
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 24 24
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 110 25 W
I
AR
Max current during repetitive or single
pulse avalanche
(pulse width limited by T
jmax
)
2A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
88 mJ
V
iso
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500 V
dv/dt
(3)
3. I
SD
≤ 6 A, di/dt ≤ 100 A/μs, V
Peak
≤ V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
R
thj-case
Thermal resistance junction-case max 1.14 5 1.14
°C/WR
thj-amb
Thermal resistance junction-amb max 62.5 100
R
thj-pcb
(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Thermal resistance junction-pcb max 50
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