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STGW20NC60VD 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
IGBT晶体管
封装:
TO-247-3
描述:
STMICROELECTRONICS STGW20NC60VD 单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚
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STGW20NC60VD数据手册
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IKW30N60T
TrenchStop
®
Series q
Power Semiconductors
6 Rev. 2.3 Nov 06
t, SWITCHING TIMES
0A 10A 20A 30A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t, SWITCHING TIMES
10Ω 20Ω 30Ω 40Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V, R
G
= 10,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
GE(th),
GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
, JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V, I
C
= 30A, R
G
=10,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.43mA)
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