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STM32F071V8T7TR 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
32位控制器
封装:
LQFP
描述:
STMICROELECTRONICS STM32F071V8T7TR 微控制器, 32位, ARM 皮质-M0, 48 MHz, 64 KB, 16 KB, 100 引脚, LQFP
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符号图
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引脚图在P29P30P31P32P33P34P35P36P37P38P39Hot
典型应用电路图在P69P71P88
原理图在P12
封装尺寸在P100
型号编码规则在P118P119P120P121
标记信息在P102P105P108P111P114P117
封装信息在P100P101P102P103P104P105P106P107P108P109P110P111
技术参数、封装参数在P49P123
应用领域在P123
电气规格在P47P48P49P50P51P52P53P54P55P56P57P58
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STM32F071V8T7TR数据手册
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Electrical characteristics STM32F071xx
72/123 DocID025451 Rev 2
6.3.8 Internal clock source characteristics
The parameters given in Table 42 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI) RC oscillator
Figure 18. HSI oscillator accuracy characterization results
Table 42. HSI oscillator characteristics
(1)
1. V
DDA
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - 8 - MHz
TRIM HSI user trimming step - - 1
(2)
2. Guaranteed by design, not tested in production.
%
DuCy
(HSI)
Duty cycle 45
(2)
-55
(2)
%
ACC
HSI
Accuracy of the HSI
oscillator (factory
calibrated)
T
A
= –40 to 105 °C –3.8
(3)
3. Data based on characterization results, not tested in production.
- 4.6
(3)
%
T
A
= –10 to 85 °C –2.9
(3)
- 2.9
(3)
%
T
A
= 0 to 70 °C –1.3
(3)
- 2.2
(3)
%
T
A
= 25 °C –1 - 1 %
t
su(HSI)
HSI oscillator startup
time
1
(2)
-2
(2)
μs
I
DDA(HSI)
HSI oscillator power
consumption
- 80 100
(2)
μA
-36
-!8
-).
4;#=
!
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