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STM32F205VGT6TR 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
32位控制器
封装:
LQFP
描述:
STMICROELECTRONICS STM32F205VGT6TR 微控制器, 32位, ARM 皮质-M3, 120 MHz, 1 MB, 132 KB, 100 引脚, LQFP
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STM32F205VGT6TR数据手册
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DS6329 Rev 18 91/181
STM32F20xxx Electrical characteristics
180
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
6.3.9 Internal clock source characteristics
The parameters given in Table 32 and Table 33 are derived from tests performed under
ambient temperature and V
DD
supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 31. LSE oscillator characteristics (f
LSE
= 32.768 kHz)
(1)
1. Guaranteed by design, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
R
F
Feedback resistor - - 18.4 - M
I
DD
LSE current consumption - - - 1 µA
g
m
Oscillator Transconductance - 2.8 - - µA/V
t
SU(LSE)
(2)
2. t
SU(LSE)
is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time V
DD
is stabilized - 2 - s
ai17531
OSC32_OUT
OSC32_IN
f
LSE
C
L1
R
F
STM32F
32.768 kHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
C
L2
Table 32. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, PLL OFF, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - - 16 - MHz
ACC
HSI
HSI user-trimming step
(2)
2. Guaranteed by design, not tested in production.
---1%
Accuracy of the
HSI oscillator
T
A
= –40 to 105 °C
(3)
3. Guaranteed by characterization results.
– 8 - 4.5 %
T
A
= –10 to 85 °C
(3)
– 4 - 4 %
T
A
= 25 °C
(4)
4. Factory calibrated, parts not soldered.
– 1 - 1 %
t
su(HSI)
(2)
HSI oscillator startup time - - 2.2 4.0 µs
I
DD(HSI)
(2)
HSI oscillator power consumption - - 60 80 µA
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