Datasheet 搜索 > 微控制器 > ST Microelectronics（意法半导体） > STM32F401CCY6TT 数据手册 > STM32F401CCY6TT 数据手册 112/134 页
器件3D模型￥ 16.881
STM32F401CCY6TT 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
微控制器
封装:
WLCSP-49
描述:
ARM Cortex-M4 84MHz 闪存：256K@x8bit RAM：64KB
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P33P34P35P36P37P38P39P40P41P42P43P44Hot
典型应用电路图在P79P80P110
封装尺寸在P115
型号编码规则在P131
标记信息在P118P121P124P127P129
封装信息在P115P116P117P118P119P120P121P122P123P124P125P126
技术参数、封装参数在P58P89P134
应用领域在P134
电气规格在P55P56P57P58P59P60P61P62P63P64P65P66
导航目录
STM32F401CCY6TT数据手册
Page:
of 134 Go
若手册格式错乱，请下载阅览PDF原文件
Electrical characteristics STM32F401xB STM32F401xC
112/134 DocID024738 Rev 4
6.3.21 Temperature sensor characteristics
6.3.22 V
BAT
monitoring characteristics
6.3.23 Embedded reference voltage
The parameters given in Table 75 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 14.
Table 72. Temperature sensor characteristics
Symbol Parameter Min Typ Max Unit
T
L
(1)
V
SENSE
linearity with temperature - ±1 ±2°C
Avg_Slope
(1)
Average slope - 2.5 - mV/°C
V
25
(1)
Voltage at 25 °C - 0.76 - V
t
START
(2)
Startup time - 6 10 µs
T
S_temp
(2)
ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Guaranteed by characterization, not tested in production.
2. Guaranteed by design, not tested in production.
Table 73. Temperature sensor calibration values
Symbol Parameter Memory address
TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, V
DDA
= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, V
DDA
= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F
Table 74. V
BAT
monitoring characteristics
Symbol Parameter Min Typ Max Unit
R Resistor bridge for V
BAT
-50-KΩ
Q
Ratio on V
BAT
measurement - 4 -
Er
(1)
Error on Q –1 - +1 %
T
S_vbat
(2)(2)
ADC sampling time when reading the V
BAT
1 mV accuracy
5--µs
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 75. Embedded internal reference voltage
Symbol Parameter Conditions Min
Typ
Max Unit
V
REFINT
Internal reference voltage –40 °C < T
A
< +105 °C 1.18 1.21 1.24 V
T
S_vrefint
(1)
ADC sampling time when reading the
internal reference voltage
-10--µs
V
RERINT_s
(2)
Internal reference voltage spread over the
temperature range
V
DD
= 3V ± 10mV - 3 5 mV
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
