Datasheet 搜索 > ST Microelectronics（意法半导体） > STM32F417IGH6W 数据手册 > STM32F417IGH6W 数据手册 137/203 页
￥ 49.887
STM32F417IGH6W 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
封装:
UFBGA-201
描述:
ARM Cortex-M4 168MHz 闪存：1MB RAM：192KB
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P41P42P43P44P45P46P47P48P49P50P51P52Hot
典型应用电路图在P103P104P137
封装尺寸在P165P166P167P168P169P170P171P172P173P174P175P176
型号编码规则在P186
技术参数、封装参数在P78P113
电气规格在P76P77P78P79P80P81P82P83P84P85P86P87
导航目录
STM32F417IGH6W数据手册
Page:
of 203 Go
若手册格式错乱，请下载阅览PDF原文件
DocID022063 Rev 6 137/203
STM32F415xx, STM32F417xx Electrical characteristics
Figure 49. ADC accuracy characteristics
1. See also Table 68.
2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. E
T
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 50. Typical connection diagram using the ADC
1. Refer to Table 67 for the values of R
AIN
, R
ADC
and C
ADC
.
2. C
parasitic
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5 pF). A high C
parasitic
value downgrades conversion accuracy. To remedy this,
f
ADC
should be reduced.
AIC
%
/
%
'
, 3"
)$%!,
%
4
%
$
%
,
6
$$!
6
33!
6
2%&
ORDEPENDINGONPACKAGE=
6
$$!
;,3"
)$%!,
DL
670)
9
''
$,1[
,
/
$
9
9
7
5
$,1
&
SDUDVLWLF
9
$,1
9
9
7
5
$'&
&
$'&
ELW
FRQYHUWHU
6DPSOHDQGKROG$'&
FRQYHUWHU
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
