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STM32F427VGT6 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
微控制器
封装:
LQFP-100
描述:
STMICROELECTRONICS STM32F427VGT6 微控制器, 32位, 高性能, ARM 皮质-M4, 180 MHz, 1 MB, 256 KB, 100 引脚, LQFP
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STM32F427VGT6数据手册
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Electrical characteristics STM32F427xx STM32F429xx
120/233 DocID024030 Rev 8
Figure 30. Typical application with a 32.768 kHz crystal
6.3.10 Internal clock source characteristics
The parameters given in Table 41 and Table 42 are derived from tests performed under
ambient temperature and V
DD
supply voltage conditions summarized in Table 17.
High-speed internal (HSI) RC oscillator
DL
26&B28 7
26&B,1
I
/6(
&
/
5
)
670)
N+]
UHVRQDWRU
5HVRQDWRUZLWK
LQWHJUDWHGFDSDFLWRUV
%LDV
FRQWUROOHG
JDLQ
&
/
Table 41. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - - 16 - MHz
ACC
HSI
HSI user-trimming step
(2)
2. Guaranteed by design.
---1%
Accuracy of the HSI oscillator
T
A
= –40 to 105 °C
(3)
3. Guaranteed by characterization results.
− 8-4.5%
T
A
= –10 to 85 °C
(3)
− 4- 4 %
T
A
= 25 °C
(4)
4. Factory calibrated, parts not soldered.
− 1- 1 %
t
su(HSI)
(2)
HSI oscillator startup time - - 2.2 4 µs
I
DD(HSI)
(2)
HSI oscillator power
consumption
- - 60 80 µA
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