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STP36NF06L 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
STMICROELECTRONICS STP36NF06L 晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 2.5 V
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STP36NF06L数据手册
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STP36NF06L - STB36NF06L Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0)
60 V
V
DGR
Drain-gate voltage (R
GS
=20KΩ)
60 V
V
GS
Gate-source voltage ±18 V
I
D
Drain-current (continuos) at Tc=25°C 30 A
I
D
Drain-current (continuos) at Tc=100°C 21 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain-current (pulsed) 120 A
P
TOT
Total dissipation at Tc=25°C 70 W
Derating factor 0.47 W/°C
dv/dt
(2)
2. I
SD
≤30A, di/dt ≤400A/µs, V
DD
< V
(BR)DSS.
Tj < Tjmax
Peak diode recovery voltage slope 10 V/ns
E
AS
(3)
3. Starting Tj=25°C, I
D
=15A, V
DD
=30V
Single pulse avalanche energy 225 mJ
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 2.14 °C/W
Rthj-amb Thermal resistance junction-ambient (free air) max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C
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