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STP80NF10 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
N 通道 STripFET™ II，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P8
技术参数、封装参数在P1
应用领域在P1
导航目录
STP80NF10数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
HEXFET
®
Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
GDS
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Ener
g
y
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k
––– 0.402
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient
j
––– 62
300
Max.
180
c
130
c
670
120
190
See Fig. 14, 15, 22a, 22b
370
5.3
-55 to + 175
± 20
2.5
10lb
x
in (1.1N
x
m)
IRFB4110PbF
S
D
G
TO-220AB
D
S
D
G
Form Quantity
IRFB4110PbF TO-220 Tube 50 IRFB4110PbF
Base Part Number Package Type
Standard Pack
Orderable Part Number
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
V
DSS
100V
R
DS(on)
typ.
3.7m
Ω
max.
4.5m
Ω
I
D (Silicon Limited)
180A
c
I
D (Package Limited)
120A
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